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Periodic patterning of silicon by direct nanosecond laser interference ablation

Título de la revista: APPLIED SURFACE SCIENCE
ISSN: 0169-4332
Volumen: 258
Número: 3
Páginas: 1175 - 1180
Fecha de publicación: 2011
The production of periodic structures in silicon wafers by four-beam is presented. Because laser interference ablation is a single-step and cost-effective process, there is a great technological interest in the fabrication of these structures for their use as antireflection surfaces. Three different laser fluences are used to modify the silicon surface (0.8 J cm(-2), 1.3 J cm(-2), 2.0 J cm(-2)) creating bumps in the rim of the irradiated area. Laser induced periodic surface structures (LIPSS), in particular micro and nano-ripples, are also observed. Measurements of the reflectivity show a decrease in the reflectance for the samples processed with a laser fluence of 2.0 J cm(-2), probably caused by the appearance of the nano-ripples in the structured area, while bumps start to deteriorate. (C) 2011 Elsevier B.V. All rights reserved.