To examine the impact of mechanical defects on the crystal lattice of silicon, controlled damage was applied to silicon wafers by a nanoindendation method. With increasing loads of 1, 5 and 50 N, the area with micro-cracks and strain around the indents increases. The damage is characterised by high resolution diffractometry using a conventional X-ray tube. Spatially resolved rocking curves were recorded across the indents and analysed with respect to full width at half maximum. From reciprocal space maps the amount of strain and tilt around the indents is separated.