A self-healing two-stage millimeter-wave broadband power amplifier (PA) with on-chip amplitude/phase compensation is realized in 65-nm CMOS. The amplitude and phase compensations are accomplished by using feedback bias/capacitive schemes to extend the linear operation region and optimize the PA efficiency. Tunable control knobs are inserted in the linearization block to enhance the PA performance yield against process/temperature variations and device ageing effects. This prototype shows a 5.5-dB improvement of the output 1-dB compression point (P-1dB) and a less than 2% chip-to-chip gain variation. At a 1-V supply, the differential PA achieves a saturation output power (P-sat) of 14.85 dBm with a peak power-added-efficiency (PAE) of 16.2%. With the amplitude compensation, P-1dB is increased to 13.7 dBm. With the phase compensation, the output phase variation is decreased to less than 0.5 degrees. To the best of our knowledge, this prototype provides the highest P-sat and P-1dB with simultaneously high PAE from a single PA reported to date. The PA delivers a linear gain of 9.7 dB and has a 7-GHz 3-dB bandwidth from 55.5 to 62.5 GHz with a compact total area of 0.042 mm(2).