ARTÍCULO

A Compact, Wideband, and Temperature Robust 67-90-GHz SiGe Power Amplifier With 30% PAE

Autores: del Río Orduña, David (Autor de correspondencia); Gurutzeaga Zubillaga, Iñaki; Beriain Rodríguez, Andoni; Solar Ruiz, Héctor; Berenguer Pérez, Roque José
Título de la revista: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
ISSN: 1531-1309
Volumen: 29
Número: 5
Páginas: 351 - 353
Fecha de publicación: 2019
Lugar: WOS
Resumen:
This letter presents the design of a compact, wideband, and high-efficiency E-band power amplifier, integrated in a 0.13-mu m BiCMOS process and occupying 0.3 mm(2). It consists of a single-stage balanced amplifier, with HBT transistors in cascode configuration. The power amplifier (PA) is biased in class AB, with a dc consumption of 156 mW. A compact bias circuit is employed to achieve temperature robustness, while the layout is optimized for wideband and highly efficient operation. Measurements show a peak power gain of 15.3 dB at 83 GHz, with a 29.3% fractional bandwidth and less than 1-dB degradation over a 25 degrees C-85 degrees C temperature range. The peak output power at saturation and 1-dB compression is 18.6 and 13.6 dBm, respectively, and the maximum power-added efficiency (PAE) is 30.7%.