ARTÍCULO

A wideband and high-linearity E-band transmitter integrated in a 55-nm SiGe technology for backhaul point-to-point 10-Gb/s links

Autores: del Río Orduña, David; Gurutzeaga Zubillaga, Iñaki; Rezola Garciandía, Ainhoa; Sevillano Berasategui, Juan Francisco; Vélez Isasmendi, Igone; Gunnarsson, S. E.; Tamir, N. ; Saavedra, C. E.; Gonzalez-Jimenez, J. L.; Siligaris, A.; Dehos, C.; Berenguer Pérez, Roque José
Título de la revista: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN: 0018-9480
Volumen: 65
Número: 8
Páginas: 2990 - 3001
Fecha de publicación: 2017
Lugar: WOS
Resumen:
This paper presents the design of a wideband and high-linearity E-band transmitter integrated in a 55-nm SiGe BiCMOS technology. It consists of a double-balanced bipolar ring mixer which upconverts a 16-21-GHz IF signal to the 71-76- and 81-86-GHz bands by the use of a 55/65-GHz local oscillator signal, followed by a broadband power amplifier which employs 2-way output power combining using an integrated low-loss balun transformer. The transmitter exhibits an average conversion gain of 24 dB and 22 dB at the 71-76- and 81-86-GHz bands, respectively, with an output 1-dB compression point greater than 14 and 11.5 dBm at each band. A maximum output power of 16.8 dBm is measured at 71 GHz. The dc power consumption is 575 mW. The presented transmitter is used to demonstrate the transmission of a 10.12-Gb/s 64 quadrature amplitude modulated signal with a spectral efficiency of 5.06 bit/s/Hz, which makes it suitable for use in future highcapacity backhaul and fronthaul point-to-point links.