Detalle Publicación

Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments

Autores: Danilewsky, A.N.; Wittge, J.; Hess, A.; Croll, A.; Rack, A.; Allen, D.; McNally, P.; Rolo, T.D.; Vagovic, P.; Baumbach, T.; Garagorri, J.; Elizalde González, Reyes; Tanner, B.K.
Título de la revista: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
ISSN: 1862-6300
Volumen: 208
Número: 11
Páginas: 2499 - 2504
Fecha de publicación: 2011
Resumen:
We describe a rapid digital system for X-ray diffraction imaging and demonstrate its application to the real-time identification of edge defects in a silicon wafer that had been subjected to rapid thermal annealing. The application of the system to the in situ study of slip nucleation at the location of mechanical wafer defects, indents and a thermocouple, and the subsequent dislocation dynamics is presented.
DOI: https://doi.org/10.1002/pssa.201184264
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